| PART |
Description |
Maker |
| HY29DS323 HY29DS322 HY29DS323BF-10 HY29DS322BF-12 |
EEPROM EEPROM
32 MEGABIT (4M X 8/2M X16) SUPER-LOW VOLTAGE, DUAL BANK, SIMULTANEOUS READ/WRITE, FLASH MEMORY
|
Hynix Semiconductor, Inc.
|
| MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71
TRIMMER, 15 TURN 20K
CONN HEADER 12POS DL PCB 30GOLD
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| IS28F400BVB-120P IS28F400BLVB-120PI IS28F400BLVT-1 |
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Integrated Silicon Solution, Inc.
|
| LH28F160S3HB-L10 LH28F160S3R-L10 LH28F160S3HD-L10 |
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Sharp, Corp.
HIROSE ELECTRIC Co., Ltd.
|
| LH28F800SGR-L100 LH28F800SGN-L100 LH28F800SGB-L100 |
x16 Flash EEPROM x16闪存EEPROM
|
TE Connectivity, Ltd.
|
| AT49LV4096A-70CC AT49BV4096A-11CI AT49LV4096A-70RC |
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Atmel, Corp.
|
| MBM29LV800T-10PFNBSP MBM29LV800T-10PF |
x8/x16 Flash EEPROM
From old datasheet system
|
Fujitsu Ltd
|
| HYCFL001-150 |
x8/x16 Flash EEPROM Module x8/x16闪存EEPROM模块
|
Lumex, Inc.
|
| MX29F1615 |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
|
MCNIX[Macronix International]
|
